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NSB9435T1G High Current Bias Resistor Transistor
PNP Silicon
Features http://onsemi.com
* Collector -Emitter Sustaining Voltage - * * * * *
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging ESD Rating - Human Body Model: Class 1B - Machine Model: Class B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS
COLLECTOR 2,4
BASE 1
EMITTER 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO VCB VEB IB 30 45 Vdc Vdc Vdc Adc Adc 6.0 1.0 3.0 5.0 Base Current - Continuous Collector Current - Continuous - Peak IC Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1 sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25_C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 3.0 24 1.56 0.72 W mW/_C W W TJ, Tstg - 55 to + 150 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
(c) Semiconductor Components Industries, LLC, 2010
Rating
Symbol
Value
Unit
SOT-223 CASE 318E STYLE 1
MARKING DIAGRAM
AYW 9435R G G 1 A = Assembly Location Y = Year W = Work Week 9435R = Device Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device NSB9435T1G Package SOT-223 (Pb-Free) Shipping 1000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
September, 2010 - Rev. 6
1
Publication Order Number: NSB9435T1/D
NSB9435T1G
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Case Junction-to-Ambient on 1 sq.(645 sq. mm) Collector pad on FR-4 board material Junction-to-Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 board material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 s Symbol RqJC RqJA RqJA TL Value 42 80 174 260 Unit _C/W
_C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics OFF CHARACTERISTICS Symbol Min Typ Max Unit
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I
Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) VCEO(sus) VEBO ICER 30 - - Vdc 6.0 - - Vdc Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125C) Emitter Cutoff Current (VBE = 5.0 Vdc) - - - - 20 200 mAdc IEBO - - 700 mAdc ON CHARACTERISTICS (Note 1) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) - - - 0.155 - - 0.210 0.275 0.550 Vdc VBE(sat) VBE(on) hFE - - 1.25 Vdc Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Resistor - - 1.10 Vdc 125 110 90 7.5 220 - - 10 - - - - R1 12.5 kW DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Cob Cib fT - 100 150 pF - 135 - pF Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) - 110 - MHz 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. fT = |hFE| S ftest
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NSB9435T1G
0.3 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.25 0.2 0.15 0.1 0.05 0 0.001 0.01 0.1 1.2 A 0.8 A 0.5 A 0.25 A 1 IB, BASE CURRENT (mA) IC = 3.0 A 1000
hFE, DC CURRENT GAIN
TA = 150C 25C -55C
100
10
VCE = 1.0 V 0.1 1 IC, COLLECTOR CURRENT (A) 10
Figure 1. Collector Saturation Region
Figure 2. DC Current Gain
1000
10
hFE, DC CURRENT GAIN
100
25C -55C
V, VOLTAGE (V)
TA = 150C
1
VBE(sat)
0.1
VCE(sat)
10
VCE = 4.0 V 0.1 1 IC, COLLECTOR CURRENT (A) 10
0.01
IC/IB = 10 1.0E-01 1.0E+00 IC, COLLECTOR CURRENT (A) 1.0E+01
Figure 3. DC Current Gain
Figure 4. "ON" Voltages
1.0E+00 VBE(sat)
1.2 1
-55C 25C TA = 155C
V, VOLTAGE (V)
V, VOLTAGE (V) IC/IB = 50 1.0E+01
VCE(sat)
0.8 0.6 0.4 0.2 0 0.1 1
1.0E-01
1.0E-02
1.0E-01
1.0E+00 IC, COLLECTOR CURRENT (A)
10
IC, COLLECTOR CURRENT (A)
Figure 5. "ON" Voltages
Figure 6. VBE(on) Voltage
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NSB9435T1G
1000 Cob, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 10 0.5 ms 1.0 5.0 ms 100 ms 0.1
100
10 f = 1 MHz TA = 25C 1 0.1 1 10 100
0.01
0.001
BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (V)
Figure 7. Output Capacitance
4.0 PD, POWER DISSIPATION (WATTS)
Figure 8. Active Region Safe Operating Area
3.0 TC
2.0
1.0 TA 0 25 50 75 100 125 150
There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
T, TEMPERATURE (C)
Figure 9. Power Derating
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001
0.01
RqJA(t) = r(t) qJA qJA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) qJA(t) 0.01 0.1 t, TIME (seconds) 1.0 10
P(pk)
t1 t2 DUTY CYCLE, D = t1/t2 100 1000
0.0001
0.0001
0.001
Figure 10. Thermal Response
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NSB9435T1G
PACKAGE DIMENSIONS
SOT-223 (TO-261) CASE 318E-04 ISSUE N
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10
D b1
4
HE
E
1 2 3
e1
b e A q L L1 C
q
0.08 (0003)
A1
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
SOLDERING FOOTPRINT*
3.8 0.15 2.0 0.079
2.3 0.091
2.3 0.091
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NSB9435T1/D

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